View 2sa1814 datasheet:

Ordering number:EN3973 PNP Epitaxial Planar Silicon Transistor 2SA1814 Low-Frequency General-Purpose Amplifier Driver, Muting Circuit Applications Features Package Dimensions · Very small-sized package permitting 2SA1814- unit:mm applied sets to be made smaller and slimmer. 2018B · Adoption of FBET process. [2SA1814] · High DC current gain (hFE=500 to 1200). · Low collector-to-emitter saturation voltage (VCEO(sat)? 0.3V). · High VEBO (VEBO? 15V). 1 : Base 2 : Emitter 3 : Collector SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –30 V Collector-to-Emitter Voltage VCEO –25 V Emitter-to-Base Voltage VEBO –15 V Collector Current IC –150 mA Collector Current (Pulse) ICP –300 m