View 2sa1816 e datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Transistor 2SA1816(Tentative) Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm 4.0 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 150 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO 5 V 1.27 1.
Keywords
2sa1816 e Datasheet, Design, MOSFET, Power
2sa1816 e RoHS, Compliant, Service, Triacs, Semiconductor
2sa1816 e Database, Innovation, IC, Electricity
