View 2sa1816 e datasheet:

Transistor 2SA1816(Tentative) Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm 4.0± 0.2 Features High collector to emitter voltage VCEO. Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO –150 V Collector to emitter voltage VCEO –150 V Emitter to base voltage VEBO –5 V 1.27 1.27 2.54± 0.15 Peak collector current ICP –100 mA Collector current IC –50 mA 1:Emitter Collector power dissipation PC 300 mW 2:Collector EIAJ:SC–72 Junction temperature Tj 150 ?C 3:Base New S Type Package Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = –100V, IE = 0 –1 µ A Coll