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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sa1823

Ordering number:EN3870 PNP Epitaxial Planar Silicon Transistor 2SA1823 20V/8A Switching Applications Features Package Dimensions · Adoption of MBIT process. unit:mm · Low saturation voltage. 2084 · Fast swicthing speed. [2SA1823] · Large current capacity. · It is possible to make appliances more compact because it’s height on board is 9.5mm. · Meets radial taping. E : Emitter C : Collector B : Base SANYO : FLP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –25 V Collector-to-Emitter Voltage VCEO –20 V Emitter-to-Base Voltage VEBO –5 V Collector Current IC –8 A Collector Current (Pulse) ICP –12 A Base Current IB –1.5 A Collector Dissipation PC 1.5 W Junction Temperature Tj 150 ?C

Keywords

 2sa1823 Datasheet, Design, MOSFET, Power

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 2sa1823 Database, Innovation, IC, Electricity

 

 
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