View 2sa1831 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:EN3686A PNPTriple Diffused Planar Silicon Transistors 2SA1831 High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions · High breakdown voltage (VCEO min=–800V). unit:mm · Small Cob (Cob typ=1.6pF). 2010B · High reliabirity (Adoption of HVP processes). [2SA1831] JEDEC : TO-220AB E : Emitter EIAJ : SC-46 C : Collector B : Base Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –800 V Collector-to-Emitter Voltage VCEO –800 V Emitter-to-Base Voltage VEBO –7 V Collector Current IC –20 mA Collector Current (Pulse) ICP –60 mA Collector Dissipation PC 1.75 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteri
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2sa1831 Datasheet, Design, MOSFET, Power
2sa1831 RoHS, Compliant, Service, Triacs, Semiconductor
2sa1831 Database, Innovation, IC, Electricity
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