View 2sa1858 e datasheet:

Transistor 2SA1858 Silicon PNP epitaxial planer type For general amplification Unit: mm 5.0� 0.2 4.0� 0.2 Features High collector to emitter voltage VCEO. 0.7� 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO �300 V +0.15 +0.15 0.45 �0.1 0.45 �0.1 Collector to emitter voltage VCEO �300 V 1.27 1.27 Emitter to base voltage VEBO �5 V Peak collector current ICP �100 mA Collector current IC �70 mA 1:Emitter 1 2 3 2:Collector Collector power dissipation PC 1 W 2.54� 0.15 3:Base Junction temperature Tj 150 ?C TO�92NL Package Storage temperature Tstg �55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector to emitter voltage VCEO IC = �100� A, IB = 0 �300 V Emitter to