View 2sa1862 datasheet:

2SA1862 Transistors High-voltage Switching Transistor (-400V, -2A) 2SA1862 Features External dimensions (Units : mm) 1) High breakdown voltage. (BVCEO = -400V) 2) Low saturation voltage. 5.5 1.5 (Typ. VCE (sat) = -0.3V at IC / IB = -500mA / -100mA) 3) High switching speed, typically tf = 0.4µs at IC = -1A. 0.9 C0.5 4) Wide SOA (safe operating area). 0.8Min. (1) Base(Gate) 1.5 2.5 (2) Collector(Drain) ROHM : CPT3 9.5 (3) Emitter(Source) EIAJ : SC-63 Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO -400 V Collector-emitter voltage VCEO -400 V Emitter-base voltage VEBO -7 V -2 A (DC) Collector current IC -4 A (Pulse) * 1 W Collector power dissipation PC 10 W (Tc = 25?C) Junction temperature Tj 150 ?C Storage tem