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2sa1923

2SA1923 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1923 High Voltage Switching Applications Unit: mm High voltage: VCEO = -400 V Low saturation voltage: V = -1 V (max) CE (sat) (I = -100 mA, I = -10 mA) C B Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -400 V Collector-emitter voltage VCEO -400 V Emitter-base volt

Keywords

 2sa1923 Datasheet, Design, MOSFET, Power

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