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2sa1937

2SA1937 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High Voltage Switching Applications Unit: mm High voltage: VCEO = -600 V Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -600 V Collector-emitter voltage VCEO -600 V Emitter-base voltage VEBO -7 V DC IC -0.5 Collector current A Pulse ICP -1 Base current IB -0.25

Keywords

 2sa1937 Datasheet, Design, MOSFET, Power

 2sa1937 RoHS, Compliant, Service, Triacs, Semiconductor

 2sa1937 Database, Innovation, IC, Electricity

 

 
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