View 2sa1973 datasheet:

Ordering number:ENN5613 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1973/2SC5310 DC/DC Converter Applications Features Package Dimensions · Adoption of FBET, MBIT processes. unit:mm · Large current capacitance. 2018B · Low collector-to-emitter saturation voltage. [2SA1973/2SC5310] · High-speed switching. 0.4 · Ultrasmall package facilitates miniaturization in end 0.16 3 products. 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 : Base 2 : Emitter 3 : Collector Specifications SANYO : CP ( ) : 2SA1973 Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)30 V Collector-to-Emitter Voltage VCEO (–)25 V Emitter-to-Base Voltage VEBO (–)6 V Collector Current IC (–)1 A Collector Current (Pulse) ICP (–)3 A Base Cu