View 2sb1209 e datasheet:

Transistor 2SB1209 Silicon PNP triple diffusion planer type For low-frequency amplification Unit: mm 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High collector to base voltage VCBO. High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat). 0.85 Absolute Maximum Ratings (Ta=25?C) 0.55± 0.1 0.45± 0.05 Parameter Symbol Ratings Unit 3 2 1 Collector to base voltage VCBO –400 V Collector to emitter voltage VCEO –400 V 2.5 2.5 Emitter to base voltage VEBO –5 V Peak collector current ICP –200 mA Collector current IC –100 mA 1:Base 2:Collector EIAJ:SC–71 Collector power dissipation PC* 1 W 3:Emitter M Type Mold Package Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C * Printed circuit board: Copper foil area o