View 2sb1236 datasheet:

2SB1236 Transistors Power Transistor (-120V, -1.5A) 2SB1236 Features External dimensions (Units : mm) 1) High breakdown voltage. (BVCEO = -120V) 2) Low collector output capacitance. 2.5 6.8 (Typ. 30pF at VCB = -10V) 3) High transition frequency. (fT = 50MHz) 0.65Max. 4) Complements the 2SD1857. 0.5 (1) (2) (3) 2.54 2.54 1.05 0.45 Taping specifications Absolute maximum ratings (Ta=25°C) (1) Emitter Parameter Symbol Limits Unit (2) Collector ROHM : ATV Collector-base voltage VCBO -120 V (3) Base Collector-emitter voltage VCEO -120 V Emitter-base voltage VEBO -5 V -1.5 A (DC) Collector current IC -3 A (Pulse) *1 Collector power dissipation PC 1 W *2 Junction temperature Tj 150 °C Storage temperature Tstg -55~+150 °C 1 Single pulse Pw = 100ms * 2 Printed