View 2sb1275 datasheet:

2SB1275 / 2SB1236A Transistors Power Transistor (-160V , -1.5A) 2SB1275 / 2SB1236A Features External dimensions (Units : mm) 1) High breakdown voltage.(BVCEO = -160V) 2) Low collector output capacitance. 2SB1275 5.5 1.5 (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 0.9 4) Complements the 2SD1918 / 2SD1857A. C0.5 0.8Min. 1.5 2.5 9.5 (1) Base(Gate) ROHM : CPT3 (2) Collector(Drain) (3) Emitter(Source) Absolute maximum ratings (Ta = 25°C) EIAJ : SC-63 Parameter Symbol Limits Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -160 V 2SB1236A 6.8 Emitter-base voltage VEBO -5 V 2.5 -1.5 A(DC) Collector current IC -3 A(Pulse) ?1 1 Collector 0.65Max. 2SB1275 W(Tc=25°C) power 10 PC dissipation 0.5 2SB1236A 1 W ?2 (1)