View 2sb1565 datasheet:

2SB1565 Transistors Power Transistor (-60V, -3A) 2SB1565 Features External dimensions (Units : mm) 1) Low VCE(sat). (Typ.-0.3V at IC/IB = -2/-0.2A) 2) Excellent DC current gain characteristics. 10.0 4.5 3.2 2.8 ? 3) Wide SOA (safe operating area). 1.2 1.3 0.8 0.75 ( ) 2.54 2.54 2.6 (1) Base Gate (1) (2) (3) ( ) (2) Collector Drain (1) (2) (3) (3) Emitter(Source) ROHM : TO-220FN Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -60 V Emitter-base voltage VEBO -7 V IC -3 A (DC) Collector current ICP -6 A (Pulse) * 2 W Collector power dissipation PC 25 W (Tc = 25°C) Junction temperature Tj 150 °C Storage temperature Tstg -55~+150 °C * Single pulse Pw = 100ms Packaging specifi