View 2sb1592 e datasheet:

Transistor 2SB1592 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm 5.0± 0.2 4.0± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Allowing supply with the radial taping. 0.7± 0.1 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V +0.15 +0.15 0.45 –0.1 0.45 –0.1 Collector to emitter voltage VCEO –25 V 1.27 1.27 Emitter to base voltage VEBO –11 V Peak collector current ICP* –10 A Collector current IC –3 A 1 2 3 1:Emitter 2:Collector 2.54± 0.15 Collector power dissipation PC 1 W 3:Base Junction temperature Tj 150 ?C TO–92NL Package Storage temperature Tstg –55 ~ +150 ?C * Applied are shot pulse of ? 1ms width Electrical Characteristics (Ta=25?C) Parameter Symbol Cond