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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sb1599_e

Transistor 2SB1599 Silicon PNP epitaxial planer type For power amplification Unit: mm Complementary to 2SD2457 1.5± 0.1 4.5± 0.1 Features 1.6± 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45° zine packing. 0.4± 0.08 0.4± 0.04 0.5± 0.08 1.5± 0.1 Absolute Maximum Ratings (Ta=25?C) 3.0± 0.15 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO –50 V marking Collector to emitter voltage VCEO –40 V Emitter to base voltage VEBO –5 V Peak collector current ICP –3 A 1:Base 2:Collector EIAJ:SC–62 Base current IB – 0.6 A 3:Emitter Mini Power Type Package Collector power dissipation PC* 1 W Junction temperature Tj 150

Keywords

 2sb1599 e Datasheet, Design, MOSFET, Power

 2sb1599 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sb1599 e Database, Innovation, IC, Electricity

 

 
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