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View 2sb1612 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sb1612_e

Transistor 2SB1612 Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SD2474 1.5± 0.1 4.5± 0.1 Features 1.6± 0.2 Low collector to emitter saturation voltage VCE(sat). Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the maga- 45° zine packing. 0.4± 0.08 0.4± 0.04 0.5± 0.08 1.5± 0.1 Absolute Maximum Ratings (Ta=25?C) 3.0± 0.15 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO –10 V marking Collector to emitter voltage VCEO –10 V Emitter to base voltage VEBO –7 V Peak collector current ICP –2.4 A 1:Base 2:Collector EIAJ SC–62 Collector current IC –2 A 3:Emitter Mini Power Type Package Collector power dissipation PC* 1 W Junction tempera

Keywords

 2sb1612 e Datasheet, Design, MOSFET, Power

 2sb1612 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sb1612 e Database, Innovation, IC, Electricity

 

 
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