View 2sb647 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SB647, 2SB647A Silicon PNP Epitaxial Application � Low frequency power amplifier � Complementary pair with 2SD667/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB647, 2SB647A Absolute Maximum Ratings (Ta = 25�C) Item Symbol 2SB647 2SB647A Unit Collector to base voltage VCBO �120 �120 V Collector to emitter voltage VCEO �80 �100 V Emitter to base voltage VEBO �5 �5 V Collector current IC �1 �1 A Collector peak current iC(peak) �2 �2 A Collector power dissipation PC 0.9 0.9 W Junction temperature Tj 150 150 � C Storage temperature Tstg �55 to +150 �55 to +150 � C Electrical Characteristics (Ta = 25�C) 2SB647 2SB647A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO �120 � � �120 � � V IC = �10 � A, IE = 0 breakdown v
Keywords
2sb647 Datasheet, Design, MOSFET, Power
2sb647 RoHS, Compliant, Service, Triacs, Semiconductor
2sb647 Database, Innovation, IC, Electricity
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