View 2sb647 datasheet:

2SB647, 2SB647A Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD667/A Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB647, 2SB647A Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SB647 2SB647A Unit Collector to base voltage VCBO –120 –120 V Collector to emitter voltage VCEO –80 –100 V Emitter to base voltage VEBO –5 –5 V Collector current IC –1 –1 A Collector peak current iC(peak) –2 –2 A Collector power dissipation PC 0.9 0.9 W Junction temperature Tj 150 150 ° C Storage temperature Tstg –55 to +150 –55 to +150 ° C Electrical Characteristics (Ta = 25°C) 2SB647 2SB647A Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO –120 — — –120 — — V IC = –10 µ A, IE = 0 breakdown v