View 2sb779 e datasheet:

Transistor 2SB779 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm +0.2 2.8 –0.3 +0.25 Features 0.65± 0.15 1.5 –0.05 0.65± 0.15 Low collector to emitter saturation voltage VCE(sat). Satisfactory linearity of hFE at the low collector voltage. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit 0.1 to 0.3 Collector to base voltage VCBO –25 V 0.4± 0.2 Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –7 V Peak collector current ICP –1 A 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 Collector current IC – 0.5 A 3:Collector Mini Type Package Collector power dissipation PC