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View 2sb790 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sb790_e

Transistor 2SB790 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm Complementary to 2SD969 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25?C) 0.55± 0.1 0.45± 0.05 Parameter Symbol Ratings Unit Collector to base voltage VCBO –25 V 3 2 1 Collector to emitter voltage VCEO –20 V Emitter to base voltage VEBO –7 V 2.5 2.5 Peak collector current ICP –1 A Collector current IC – 0.5 A 1:Base 2:Collector EIAJ:SC–71 Collector power dissipation PC 600 mW 3:Emitter M Type Mold Package Junction temperature Tj 150 ?C Storage temperature

Keywords

 2sb790 e Datasheet, Design, MOSFET, Power

 2sb790 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sb790 e Database, Innovation, IC, Electricity

 

 
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