View 2sb792 e datasheet:

Transistor 2SB792, 2SB792A Silicon PNP epitaxial planer type For high breakdown voltage low-noise amplification Unit: mm Complementary to 2SD814 +0.2 2.8 –0.3 +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 Features High collector to emitter voltage VCEO. Low noise voltage NV. 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to 2SB792 –150 0.1 to 0.3 VCBO V 0.4± 0.2 base voltage 2SB792A –185 Collector to 2SB792 –150 VCEO V emitter voltage 2SB792A –185 Emitter to base voltage VEBO –5 V 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 Peak collector current ICP –100 mA 3:Collector Mini Type Package Collector current