View 2sb976 e datasheet:

Transistor 2SB976 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm For DC-DC converter 5.0± 0.2 4.0± 0.2 For stroboscope Features Low collector to emitter saturation voltage VCE(sat). Large collector current IC. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO –27 V 1.27 1.27 Collector to emitter voltage VCEO –18 V Emitter to base voltage VEBO –7 V 1 2 3 1:Emitter Peak collector current ICP –8 A 2:Collector 3:Base Collector current IC –5 A 2.54± 0.15 JEDEC:TO–92 Collector power dissipation PC 0.75 W EIAJ:SC–43A Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ