View 2sc3279 datasheet:

2SC3279 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3279 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications • High DC current gain and excellent hFE linearity : h = 140~600 (V = 1 V, I = 0.5 A) FE (1) CE C : h = 70 (min), 200 (typ.) (V = 1 V, I = 2 A) FE (2) CE C • Low saturation voltage: V = 0.5 V (max) CE (sat) (I = 2 A, I = 50 mA) C B Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V VCES 30 Collector-emitter voltage V VCEO 10 Emitter-base voltage VEBO 6 V DC IC 2 JEDEC TO-92 Collector current A Pulsed ICP 5 JEITA SC-43 (Note 1) TOSHIBA 2-5F1B Base current IB 0.2 A Collector power dissipation PC 750 mW Weight: 0.21 g (typ.) Junction temperature