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2sc3295

2SC3295 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3295 Audio Frequency Amplifier Applications Unit: mm Switching Applications • High hFE: h = 600~3600 FE • High voltage: V = 50 V CEO • High collector current: I = 150 mA (max) C • Small package Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Base current IB 30 mA Collector power dissipation PC 150 mW JEDEC TO-236MOD Junction temperature Tj 125 °C JEITA SC-59 Storage temperature range Tstg -55~125 °C TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ.

Keywords

 2sc3295 Datasheet, Design, MOSFET, Power

 2sc3295 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc3295 Database, Innovation, IC, Electricity

 

 
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