View 2sc3303 datasheet:

2SC3303 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3303 Industrial Applications High Current Switching Applications Unit: mm DC-DC Converter Applications • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (I = 3 A) C • High speed switching time: t = 1.0 µs (typ.) stg Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 7 V DC IC 5 Collector current A Pulse ICP 8 Base current IB 1 A Ta = 25°C 1.0 Collector power PC W dissipation Tc = 25°C 20 JEDEC ? Junction temperature Tj 150 °C JEITA ? Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ? JEITA ? TOSHIBA 2-7J1A Wei