View 2sc3311a e datasheet:

Transistor 2SC3311A Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SA1309A 4.0± 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 7 V 1.27 1.27 Peak collector current ICP 200 mA 2.54± 0.15 Collector current IC 100 mA 1:Emitter Collector power dissipation PC 300 mW 2:Collector EIAJ:SC–72 Junction temperature Tj 150 ?C 3:Base New S Type Package Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 10V, IE = 0 0.1 µ A Collect