View 2sc3312 e datasheet:

Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SA1310 4.0± 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 55 V 1.27 1.27 Emitter to base voltage VEBO 7 V 2.54± 0.15 Peak collector current ICP 200 mA Collector current IC 100 mA 1:Emitter 2:Collector EIAJ:SC–72 Collector power dissipation PC 300 mW 3:Base New S Type Package Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO