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2sc3312_e

Transistor 2SC3312 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SA1310 4.0 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 60 V Collector to emitter v

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 2sc3312 e Datasheet, Design, MOSFET, Power

 2sc3312 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc3312 e Database, Innovation, IC, Electricity

 

 
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