View 2sc3313 e datasheet:

Transistor 2SC3313 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 4.0± 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. Absolute Maximum Ratings (Ta=25?C) marking Parameter Symbol Ratings Unit 1 2 3 Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V 1.27 1.27 Emitter to base voltage VEBO 5 V 2.54± 0.15 Collector current IC 30 mA Collector power dissipation PC 300 mW 1:Emitter 2:Collector EIAJ:SC–72 Junction temperature Tj 150 ?C 3:Base New S Type Package Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µ A, IE = 0 30 V