View 2sc3315 e datasheet:

Transistor 2SC3315 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 4.0± 0.2 Features Optimum for high-density mounting. Allowing supply with the radial taping. Optimum for RF amplification of FM/AM radios. High transition frequency fT. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V 2.54± 0.15 Emitter to base voltage VEBO 3 V Collector current IC 15 mA 1:Emitter 2:Collector EIAJ:SC–72 Collector power dissipation PC 300 mW 3:Base New S Type Package Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector to base voltag