View 2sc3324 datasheet:

2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3324 Audio Frequency Low Noise Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent h linearity: h (I = 0.1 mA)/ h (I = 2 mA) FE FE C FE C = 0.95 (typ.) • High hFE: hFE = 200~700 • Low noise: NF (2) = 0.2dB (typ.), 3dB (max) • Complementary to 2SA1312 • Small package Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Base current IB 20 mA JEDEC TO-236MOD Collector power dissipation PC 150 mW JEITA SC-59 Junction temperature Tj 125 °C TOSHIBA 2-3F1A Storage temperature range Tstg -55~125 °C Weight: 0.012 g (typ.)