View 2sc3326 datasheet:

2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse h : Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C • Low on resistance: R = 1 ? (typ.) (I = 5 mA) ON B • High DC current gain: hFE = 200~1200 • Small package Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 25 V Collector current IC 300 mA Base current IB 60 mA Collector power dissipation PC 150 mW JEDEC TO-236MOD Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEITA SC-59 TOSHIBA 2-3F1A Marking Weight: 0.012 g (typ.)