View 2sc3326 datasheet:

2SC3326 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3326 For Muting and Switching Applications Unit: mm � High emitter-base voltage: VEBO = 25 V (min) � High reverse h : Reverse h = 150 (typ.) (V = -2 V, I = -4 mA) FE FE CE C � Low on resistance: R = 1 ? (typ.) (I = 5 mA) ON B � High DC current gain: hFE = 200~1200 � Small package Maximum Ratings (Ta = =

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