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2sc3329

2SC3329 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3329 For Low Noise Audio Amplifier Applications and Unit: mm Recommended for The First Stages of MC Head Amplifiers • Very low noise in the region of low signal source impedance equivalent input noise voltage: En = 0.6 nV/Hz1/2 (typ.) • Low pulse noise. Low 1/f noise • Low base spreading resistance: r = 2.0 ? (typ.) bb’ • Complementary to 2SA1316 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 80 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 100 mA Base current IB 20 mA JEDEC TO-92 Collector power dissipation PC 400 mW JEITA SC-43 Junction temperature Tj 125 °C TOSHIBA 2-5F1B Storage temp

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 2sc3329 Datasheet, Design, MOSFET, Power

 2sc3329 RoHS, Compliant, Service, Triacs, Semiconductor

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