View 2sc3361 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:EN3217 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1331/2SC3361 High-Speed Switching Applications Features Package Dimensions � Fast switching speed. unit:mm � High breakdown voltage. 2018A � Small-sized package permitting the 2SA1331/ [2SA1331/2SC3361] 2SC3361-applied sets to be made small and slim. Switching Time Test Circuit C : Collector B : Base (For PNP, the polarity is reversed) E : Emitter ( ) : 2SA1331 Unit (resistance : ? , capacitance : F) Specifications SANYO : CP Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (�)60 V Collector-to-Emitter Voltage VCEO (�)50 V Emitter-to-Base Voltage VEBO (�)5 V Collector Current IC (�)150 mA Collector Current (Pulse) ICP (�)400 mA Ba
Keywords
2sc3361 Datasheet, Design, MOSFET, Power
2sc3361 RoHS, Compliant, Service, Triacs, Semiconductor
2sc3361 Database, Innovation, IC, Electricity
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