View 2sc3515 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SC3515 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 HIGH Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = 300 V, V = 300 V CEO • Low saturation voltage: V = 0.5 V (max) CE (sat) • Small collector output capacitance: C = 3 pF (typ.) ob • Complementary to 2SA1384 • Small flat package • P = 1.0 to 2.0 W (mounted on ceramic substrate) C Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V PW-MINI Emitter-base voltage VEBO 6 V JEDEC ? Collector current IC 100 mA JEITA SC-62 Base current IB 20 mA PC 500 TOSHIBA 2-5K1A Collector power
Keywords
2sc3515 Datasheet, Design, MOSFET, Power
2sc3515 RoHS, Compliant, Service, Triacs, Semiconductor
2sc3515 Database, Innovation, IC, Electricity
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