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2sc3526_e

Transistor 2SC3526(H) Silicon NPN epitaxial planer type For display video output Unit: mm 5.9± 0.2 4.9± 0.2 Features High transition frequency fT. Small collector output capacitance Cob. Wide current range. 0.7± 0.1 2.54± 0.15 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 110 V +0.2 +0.2 Collector to emitter voltage VCER* 100 V 0.45–0.1 0.45–0.1 1.27 1.27 Collector to emitter voltage VCEO 50 V 1:Emitter Emitter to base voltage VEBO 3.5 V 1 2 3 2:Collector 3:Base Peak collector current ICP 300 mA EIAJ:SC–51 Collector current IC 150 mA TO–92L Package Collector power dissipation PC 1.0 W Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C * REB = 470? Electrical Characteristics (Ta=25?C) Param

Keywords

 2sc3526 e Datasheet, Design, MOSFET, Power

 2sc3526 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc3526 e Database, Innovation, IC, Electricity

 

 
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