View 2sc3576 datasheet:

Ordering number:EN1799D NPN Epitaxial Planar Silicon Transistor 2SC3576 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · LF general-purpose amplifiers, various drivers, unit:mm muting circuit. 2033 [2SC3576] Features · Adoption of FBET process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)? 0.5V). · High VEBO (VEBO? 15V). B : Base C : Collector E : Emitter SANYO : SPA Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 30 V Collector-to-Emitter Voltage VCEO 25 V Emitter-to-Base Voltage VEBO 15 V Collector Current IC 300 mA Collector Current (Pulse) ICP 500 mA Base Current IB 60 mA Coll