View 2sc3605 datasheet:

2SC3605 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3605 VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm FEATURES: Low Noise Figure, High Gain NF = 1.1dB, |S |2 = 10dB (f = 1GHz) 21e MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 12 V Emitter-Base Voltage VEBO 3 V Collector Current IC 80 mA Base Current IB 40 mA Collector Power Dissipation PC 600 mW Junction Temperature Tj 150 °C Storage Temperature Range Tstg -55~150 °C JEDEC TO-92 EIAJ SC-43 TOSHIBA 2-5F1E Weight: 0.21g MICROWAVE CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAX UNIT Transition Frequency fT VCE = 10V, IC = 20mA 5 6.5 — GHz 2 |S21e| (1) VCE = 10V, I