View 2sc3607 datasheet:

2SC3607 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3607 VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Low noise figure, high gain. • NF = 1.1dB, |S |2 = 9.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Base current IB 40 mA Collector current IC 80 mA 400 Collector power dissipation PC mW 800 (Note 1) Junction temperature Tj 150 °C JEDEC ? Storage temperature range Tstg -55~125 °C JEITA ? Note 1: When mounted ceramic substrate of 250 mm2 ? 0.8 t TOSHIBA 2-5K1A Weight: 0.05 g (typ.) Microwave Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Uni