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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc3637

Ordering number:EN1615C NPN Triple Diffused Planar Silicon Transistor 2SC3637 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions · High reliability (Adoption of HVP process). unit:mm · Fast speed. 2022A · High breakdown voltage. [2SC3637] · Adoption of MBIT process. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 900 V Collector-to-Emitter Voltage VCEO 500 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 10 A Collector Current (Pulse) ICP 20 A Collector Dissipation PC Tc=25?C 90 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristic

Keywords

 2sc3637 Datasheet, Design, MOSFET, Power

 2sc3637 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc3637 Database, Innovation, IC, Electricity

 

 
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