All Transistors. Datasheet

 

View 2sc3644 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc3644

Ordering number:EN1628C NPN Triple Diffused Planar Silicon Transistor 2SC3644 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions · High reliability (Adoption of HVP process). unit:mm · High speed. 2022A · High breakdown voltage. [2SC3644] · Adoption of MBIT process. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1200 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 12 A Collector Current (Pulse) ICP 25 A Collector Dissipation PC Tc=25?C 150 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characterist

Keywords

 2sc3644 Datasheet, Design, MOSFET, Power

 2sc3644 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc3644 Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.