View 2sc3646 datasheet:

Ordering number:EN2005A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1416/2SC3646 High-Voltage Switching Applications Features Package Dimensions · Adoption of FBET, MBIT processes. unit:mm · High breakdown voltage and large current capacity. 2038 · Fast switching time. [2SA1416/2SC3646] · Very small size making it easy to provide high- density, small-sized hybrid ICs. E : Emitter C : Collector B : Base ( ) : 2SA1416 SANYO : PCP Specifications (Bottom view) Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)120 V Collector-to-Emitter Voltage VCEO (–)100 V Emitter-to-Base Voltage VEBO (–)6 V Collector Current IC (–)1 A Collector Current (Pulse) ICP (–)2 A Collector Dissipation PC 500 mW Moutned