View 2sc3647 datasheet:

Ordering number:EN2006A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1417/2SC3647 High-Voltage Switching Applications Features Package Dimensions · Adoption of FBET, MBIT processes. unit:mm · High breakdown voltage and large current capacity. 2038 · Fast switching time. [2SA1417/2SC3647] · Very small size making it easy to provide high- density, small-sized hybrid ICs. E : Emitter C : Collector B : Base ( ) : 2SA1417 SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)120 V Collector-to-Emitter Voltage VCEO (–)100 V Emitter-to-Base Voltage VEBO (–)6 V Collector Current IC (–)2 A Collector Current (Pulse) ICP (–)3 A Collector Dissipation PC 500 mW Moutned