View 2sc3649 datasheet:

Ordering number:EN2007A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1419/2SC3649 High-Voltage Switching Applications Features Package Dimensions · Adoption of FBET, MBIT processes. unit:mm · High breakdown voltage and large current capacity. 2038 · Very small size making it easy to provide high- [2SA1419/2SC3649] density hybrid ICs. E : Emitter C : Collector B : Base ( ) : 2SA1419 SANYO : PCP Specifications (Bottom view) Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)180 V Collector-to-Emitter Voltage VCEO (–)160 V Emitter-to-Base Voltage VEBO (–)6 V Collector Current IC (–)1.5 A Collector Current (Pulse) ICP (–)2.5 A Collector Dissipation PC 500 mW 1.5 W Moutned on ceramic board (250mm2? 0