View 2sc3651 datasheet:

Ordering number:EN1779A NPN Epitaxial Planar Silicon Transistor 2SC3651 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · LF amplifiers, various drivers, muting circuit. unit:mm 2038 Features [2SC3651] · High DC current gain (hFE=500 to 2000). · High breakdown voltage (VCEO? 100V). · Low collector-to-emitter saturation voltage (VCE(sat)? 0.5V). · High VEBO (VEBO? 15V). · Very small size making it easy to provide high- density, small-sized hybrid IC’s. E : Emitter C : Collector B : Base SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 120 V Collector-to-Emitter Voltage VCEO 100 V Emitter-to-Base Voltage VEBO 15 V