View 2sc3661 datasheet:

Ordering number:EN1854A NPN Epitaxial Planar Silicon Transistor 2SC3661 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · Low frequency general-purpose amplifiers, drivers, unit:mm muting circuit. 2018A [2SC3661] Features · Very small-sized package permitting 2SC3661-used sets to be made smaller, slimmer. · Adoption of FBET process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)? 0.5V). · High VEBO (VEBO? 15V). C : Collector B : Base E : Emitter SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 30 V Collector-to-Emitter Voltage VCEO 25 V Emitter-to-Base Voltage VEBO 15 V Col