View 2sc3675 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:EN1800E NPN Triple Diffused Planar Silicon Transistor 2SC3675 900V/100mA High-Voltage Amplifier High-Voltage Switching Applications Applications Package Dimensions · High voltage amplifiers. unit:mm · High-voltage switching applications. 2010C · Dynamic focus applications. [2SC3675] Features · High breakdown voltage (VCEO min=900V). · Small Cob (Cob typ=2.8pF). · Wide ASO (Adoption of MBIT process). · High reliability (Adoption of HVP process). 1 : Base JEDEC : TO-220AB 2 : Collector EIAJ : SC46 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 900 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 100 mA Co
Keywords
2sc3675 Datasheet, Design, MOSFET, Power
2sc3675 RoHS, Compliant, Service, Triacs, Semiconductor
2sc3675 Database, Innovation, IC, Electricity
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