View 2sc3708 datasheet:

Ordering number:EN2217A PNP/NPN Epitaxial Planar Silicon Transistor 2SA1450/2SC3708 Low-Frequency Driver Applications Features Package Dimensions � Adoption of FBET process. unit:mm � AF amp, AF power amp. 2003A � High breakdown voltage : VCEO>80V [2SA1450/2SC3708] JEDEC : TO-92 B : Base ( ) : 2SA1450 EIAJ : SC-43 C : Collector SANYO : NP E : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (�)100 V Collector-to-Emitter Voltage VCEO (�)80 V Emitter-to-Base Voltage VEBO (�)5 V Collector Current IC (�)500 mA Collector Current (Pulse) ICP (�)800 mA Base Current IB (�)100 mA Collector Dissipation PC 600 mW ?C Junction Temperature Tj 150 Storage Temperature Tstg �55 to +150 ?C Elect