View 2sc3708 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:EN2217A PNP/NPN Epitaxial Planar Silicon Transistor 2SA1450/2SC3708 Low-Frequency Driver Applications Features Package Dimensions · Adoption of FBET process. unit:mm · AF amp, AF power amp. 2003A · High breakdown voltage : VCEO>80V [2SA1450/2SC3708] JEDEC : TO-92 B : Base ( ) : 2SA1450 EIAJ : SC-43 C : Collector SANYO : NP E : Emitter Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)100 V Collector-to-Emitter Voltage VCEO (–)80 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)500 mA Collector Current (Pulse) ICP (–)800 mA Base Current IB (–)100 mA Collector Dissipation PC 600 mW ?C Junction Temperature Tj 150 Storage Temperature Tstg –55 to +150 ?C Elect
Keywords
2sc3708 Datasheet, Design, MOSFET, Power
2sc3708 RoHS, Compliant, Service, Triacs, Semiconductor
2sc3708 Database, Innovation, IC, Electricity
