View 2sc3757 e datasheet:

Transistor 2SC3757 Silicon NPN epitaxial planer type For high speed switching Unit: mm +0.2 2.8 –0.3 +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 Features High-speed switching. Low collector to emitter saturation voltage VCE(sat). 1 Mini type package, allowing downsizing of the equipment and 3 automatic insertion through the tape packing and the magazine packing. 2 Allowing pair use with 2SA1738. Absolute Maximum Ratings (Ta=25?C) 0.1 to 0.3 0.4± 0.2 Parameter Symbol Ratings Unit Collector to base voltage VCBO 40 V Collector to emitter voltage VCES 40 V 1:Base JEDEC:TO–236 Emitter to base voltage VEBO 5 V 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package Peak collector current ICP 300 mA Collector current IC 100 mA Marking symbol : 2Y Collector power dissipation PC