View 2sc3775 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:EN1948B NPN Epitaxial Planar Silicon Transistor 2SC3775 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Applications Package Dimensions · UHF low-noise amplifiers, wide-band amplifiers. unit:mm 2018A Features [2SC3775] · Small noise figure : NF=1.5dB typ (f=0.9GHz). · High power gain : MAG=14dB typ (f=0.9GHz). · High cutoff frequency : fT=5.0GHz typ. C : Collector B : Base E : Emitter SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 12 V Emitter-to-Base Voltage VEBO 3 V Collector Current IC 100 mA Base Current IB 30 mA Collector Dissipation PC 250 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to
Keywords
2sc3775 Datasheet, Design, MOSFET, Power
2sc3775 RoHS, Compliant, Service, Triacs, Semiconductor
2sc3775 Database, Innovation, IC, Electricity
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