View 2sc3778 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:EN1951B NPN Epitaxial Planar Silicon Transistor 2SC3778 UHF Low-Noise Amplifier, Wide-Band Amplifier Applications Applications Package Dimensions · UHF low-noise amplifiers, wide-band amplifiers. unit:mm 2004A Features [2SC3778] · Small noise figure : NF=2.2dB typ (f=0.9GHz). · High power gain : MAG=14dB typ (f=0.9GHz). · High cutoff frequency : fT=5.0GHz typ. C : Collector JEDEC : TO-92 E : Emitter EIAJ : SC-43 B : Base SANYO : NP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 20 V Collector-to-Emitter Voltage VCEO 12 V Emitter-to-Base Voltage VEBO 3 V Collector Current IC 70 mA Base Current IB 30 mA Collector Dissipation PC 500 mW Junction Temperature Tj 150 ?C Stor
Keywords
2sc3778 Datasheet, Design, MOSFET, Power
2sc3778 RoHS, Compliant, Service, Triacs, Semiconductor
2sc3778 Database, Innovation, IC, Electricity
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