View 2sc3790 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:EN2254 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1480/2SC3790 High-Definiton CRT Display Video Output Applications Features Package Dimensions · High breakdown voltage (VCEO? 300V). unit:mm · Small reverse transfer capacitance and excellent high 2042A frequency characteristic [2SA1480/2SC3790] : Cre=1.8pF (NPN), 2.3pF (PNP). · Adoption of MBIT process. B : Base C : Collector E : Emitter ( ) : 2SA1480 SANYO : TO-126ML Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)300 V Collector-to-Emitter Voltage VCEO (–)300 V Emitter-to-Base Voltage VEBO (–)5 V Collector Current IC (–)100 mA Peak Collector Current ICP (–)200 mA Collector Dissipation PC 1.5 W Tc=25?C 7 W J
Keywords
2sc3790 Datasheet, Design, MOSFET, Power
2sc3790 RoHS, Compliant, Service, Triacs, Semiconductor
2sc3790 Database, Innovation, IC, Electricity
